dm n 2015 ufde d atasheet number: ds35560 rev. 9 - 2 1 of 6 www.diodes.com december 2014 ? diodes incorporated dm n 2015 uf de advance information 20v n - channel enhancement mode mosfet product summary v (br)dss r ds(on) max package i d max t a = + 25c 20 v 11.6 m ? @ v gs = 4.5v u - dfn2020 - 6 type e 10.5a 15 m? @ v gs = 2.5v 9.4a description this new generation mosfet has been designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? general purpose interfacing switch ? power management functions features ? 0. 6 mm profile C ideal for low profile applications ? pcb footprint of 4mm 2 ? low gate threshold voltage ? low on - resistance ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note ? qualified to aec - q101 standards for high reliability mechanical data ? case: u - dfn 2020 - 6 type e ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C nipdau over copper leadframe . solderable per mil - std - 202, method 208 ? weight: 0.0065 grams (approximate) ordering information (note 4 ) part number marking reel size (inches) quantity per reel dm n 2015 u fde - 7 n4 7 3,000 dm n2015 ufde - 13 n4 13 10 ,000 note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com for more information about diodes incorporateds definitions of hal ogen - and ant imony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our websit e at http://www.diodes.com. marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d u - dfn 2020 - 6 type e bottom view n4 = product type marking code ym = date code marking y = year (ex: y = 2011) m = month (ex: 9 = september) equivalent ci rcuit pin1 bottom view pin out n4 y m source gate drain
dm n 2015 ufde d atasheet number: ds35560 rev. 9 - 2 2 of 6 www.diodes.com december 2014 ? diodes incorporated dm n 2015 uf de advance information maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value units drain - source voltage v dss 20 v gate - source voltage v gss 12 v continuous drain current (note 6 ) v gs = 4.5 v steady state t a = + 25c t a = + 70c i d 10.5 8.5 a t<10s t a = + 25c t a = + 70c i d 12.5 10.0 a continuous drain current (note 6 ) v gs = 2.5 v steady state t a = + 25c t a = + 70c i d 9.4 7.5 a t<10s t a = + 25c t a = + 70c i d 11.2 8.8 a pulsed drain curren t ( 10 s pulse, duty cycle = 1% ) i dm 80 a maximum body diode continuous current i s 2 .5 a thermal characteristics characteristic symbol value units total power dissipation (note 5 ) t a = + 25c p d 0.66 w t a = + 70 c 0.42 thermal resistance, junction to ambient (note 5 ) s teady state r ? ja 189 c/w t<10s 132 total power dissipation (note 6 ) t a = + 25c p d 2.03 w t a = + 70 c 1.31 thermal resistance, junction to ambient (note 6 ) s teady state r ? ja 61 c/w t<10s 43 thermal resistance, junction to case (note 6 ) r ? j c 9.3 operati ng and storage temperature range t j, t stg - 55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics ( note 7 ) drain - source breakdown voltage bv d ss 20 gs = 0v, i d = 250 a j = + 25c i dss ? ds = 16 v, v gs = 0v gate - source leakage i gss gs = 12 v, v ds = 0v on characteristics ( note 7 ) gate threshold voltage v gs(th) 0.5 ds = v gs , i d = 250 a ds (on) ? gs = 4. 5 v, i d = 8.5 a 1 1 .4 15 v gs = 2.5v, i d = 8.5 a 17 30 v gs = 1 . 8 v, i d = 5 a 24 50 v gs = 1 .5v, i d = 3 a forward transfer admittance |y fs | ds = 10 v, i d = 8.5 a diode forward voltage v sd gs = 0v, i s = 8.5 a dynamic characteristic s (note 8 ) input capacitance c iss ds = 10 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g ds = 10 v, i d = 8.5 a total gate charge ( v gs = 1 0v ) q g gs gd d(on) ds = 1 0 v, i d = 8.5 a v g s = 4.5 v, r g = 1.8 r d(off) f rr f = 8.5 a, di/dt = 21 0a/s rr notes: 5 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 6 . device mounted on fr - 4 substrate pc b oard, 2oz copper, with thermal b ias to bottom layer 1inch square copper plate . 7 . short duration pulse test used to minimize self - heating effect . 8 . guaranteed by design. not subject to production testing .
dm n 2015 ufde d atasheet number: ds35560 rev. 9 - 2 3 of 6 www.diodes.com december 2014 ? diodes incorporated dm n 2015 uf de advance information 0 5 10 15 20 25 30 0 1 2 3 v , drain-source voltage (v) fig.1 typical output characteristic ds i , d r a i n c u r r e n t ( a ) d 0 4 8 12 16 20 0 0.5 1.0 1.5 2.0 v , gate-source voltage (v) gs fig. 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0.01 0.02 0.03 0.04 0.05 0 4 8 12 16 20 0 i , drain-source current (a) d fig. 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 2.5v gs v = 4.5v gs v = 1.8v gs v = 1.5v gs 0 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0 2 4 6 8 10 12 v , gate-source voltage (v) gs fig. 4 typical drain-source on-resistance vs. gate-source voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i = 8.5a d i = 4.5a d 0 0.015 0 4 8 12 16 20 0.020 0.010 0.005 i , drain current (a) d fig. 5 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.6 0.8 1.2 1.4 1.6 1.0 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 6 on-resistance variation with temperature j ? v = v i = 10a gs d 4.5 v = v i = 5a gs d 2.5
dm n 2015 ufde d atasheet number: ds35560 rev. 9 - 2 4 of 6 www.diodes.com december 2014 ? diodes incorporated dm n 2015 uf de advance information 0.005 0.015 0.020 0.010 0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 7 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = v i = 10a gs d 10 v = v i = 5a gs d 4.5 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 8 gate threshold variation vs. ambient temperature j ? 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.0 0 v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = 1ma d i = 250a d 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1.0 v , source-drain voltage (v) sd fig. 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = 25c a 10 1,000 0 5 10 15 20 f = 1mhz v , drain-source voltage (v) ds fig. 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t c iss c oss c rss 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 q (nc) g , total gate charge fig. 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s v = 10v i = a ds d 8.5 0.01 0.1 1 10 100 v , drain-source voltage (v) fig. 12 soa, safe operation area ds 0.01 0.1 1 10 100 i , d r a i n c u r r e n t ( a ) d r limited ds(on) t = 150c t = 25c j(max) a v = 12v single pulse gs dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w
dm n 2015 ufde d atasheet number: ds35560 rev. 9 - 2 5 of 6 www.diodes.com december 2014 ? diodes incorporated dm n 2015 uf de advance information package outline dimensions suggested pad layout u - dfn2020 - 6 type e dim min max typ a 0.57 0.63 0.60 a1 0 0.05 0.03 a3 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 d 1.95 2.05 2.00 d2 0.85 1.05 0.95 e 1.95 2.05 2.00 e2 1.40 1.60 1.50 e l 0.25 0.35 0.30 l1 0.82 0.92 0.87 k1 k2 z all dimensions in mm dimensions value (in mm) c 0.650 x 0.400 x1 0.285 x2 1.050 y 0.500 y1 0.920 y2 1.600 y3 2.300 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration time (sec) fig. 13 transient thermal resistance 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e r (t) = r(t) * r r = 61c/w duty cycle, d = t1/ t2 ?? ? ja ja ja d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse a1 z(4x) b1 l1 k1 k2 d d2 e e b(6x) l(2x) e2 a a3 x1 y3 x (6x) c x2 y1 y2 y (2x)
dm n 2015 ufde d atasheet number: ds35560 rev. 9 - 2 6 of 6 www.diodes.com december 2014 ? diodes incorporated dm n 2015 uf de advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the righ t to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this docu ment or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever i n respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representat ives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by o ne or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which : 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury t o the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirem ents concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. furthe r, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2012 , diodes incorporated www.d iodes.com
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